SI7858ADP-T1-GE3
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Краткое описание:
12V 20A N-CH MOSFET, 2.6mR Rds On, PPAK SO-8
Дополнительная информация
N-channel MOSFET with 12V drain-source voltage and 20A continuous drain current. Features low 2.6mΩ drain-source resistance and 1.9W max power dissipation. Operates from -55°C to 150°C with a 5.7nF input capacitance. Packaged in a PPAK SO-8 surface-mount package, this component offers fast switching with 40ns turn-on and 140ns turn-off delay times.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Packaging | Tape and Reel |
| Rds On Max | 2.6mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 5.7nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 40ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 140ns |
| Max Power Dissipation | 1.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.6mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 12V |
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