SI7858BDP-T1-GE3
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Краткое описание:
N-CHANNEL TrenchFET MOSFET 40A 2.5mR 12V Surface Mount
Дополнительная информация
The SI7858BDP-T1-GE3 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 48W and a continuous drain current of 40A. The device features a drain to source resistance of 2.5mR and a drain to source voltage of 12V. It is lead free and RoHS compliant, packaged in a small outline R-XDSO-C5 package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.5mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 5.76nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 115ns |
| Max Power Dissipation | 48W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.5mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 2.5MR |
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