SI7866ADP-T1-E3
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Краткое описание:
20V 40A N-CH MOSFET 2.4mR PPAK SO-8
Дополнительная информация
N-channel MOSFET with 20V drain-source voltage and 40A continuous drain current. Features low 2.4mR drain-source on-resistance and 83W maximum power dissipation. Operates from -55°C to 150°C, with surface mount packaging in a PPAK SO-8 footprint. Includes fast switching times with turn-on delay of 18ns and fall time of 9ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.4mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 5.415nF |
| Power Dissipation | 5.4W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 49ns |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 2.4mR |
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