SI7866ADP-T1-GE3
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N-Channel MOSFET, 20V, 40A, 2.4mR, PowerPAK, SOIC
Дополнительная информация
N-channel power MOSFET featuring 20V drain-source voltage and 40A continuous drain current. Offers low 2.4mΩ drain-source on-resistance and 5.4W maximum power dissipation. This surface-mount component, housed in a leadless PowerPAK SOP-8 package, boasts fast switching speeds with a 18ns turn-on delay and 9ns fall time. Operating across a wide temperature range of -55°C to 150°C, it is halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.4mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 5.415nF |
| Threshold Voltage | 800mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 49ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 2.4MR |
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