SI7872DP-T1-E3
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Краткое описание:
2 N-CH MOSFET 30V 6.4A 22mR SOIC
Дополнительная информация
Dual N-channel MOSFET, 30V drain-source breakdown voltage, 6.4A continuous drain current, and 22mΩ maximum drain-source on-resistance. Features a 1.4W maximum power dissipation and operates across a -55°C to 150°C temperature range. Surface mountable in a SOIC package with dimensions of 4.9mm length, 5.89mm width, and 1.04mm height. Includes fast switching characteristics with turn-on delay of 9ns and fall time of 10ns. Lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | SI7 |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 22mR |
| Package/Case | SOIC |
| Polarization | N |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Power Dissipation | 1.4W |
| Number of Channels | 2 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 6.4A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 22mR |
| Drain to Source Breakdown Voltage | 30V |
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