SI7880ADP-T1-E3
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N-CH MOSFET, 30V, 40A, 3mR, PowerPAK, 83W
Дополнительная информация
N-channel power MOSFET featuring 30V drain-source voltage and 40A continuous drain current. Offers low 3mΩ drain-source on-resistance and 83W maximum power dissipation. Designed for general-purpose power applications with a 150°C maximum operating temperature. ROHS compliant, lead-free, and available in a leadless PowerPAK SOP-8 package suitable for through-hole and surface mount configurations.
| RoHS | Compliant |
| Mount | Through Hole, Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3mR |
| Nominal Vgs | 1V |
| Package/Case | DIP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 5.6nF |
| Power Dissipation | 5.4W |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 96ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3mR |
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