SI7882DP-T1-GE3
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Краткое описание:
N-CH MOSFET 12V 13A 5.5mR SOIC
Дополнительная информация
N-channel MOSFET with 12V Vdss and 22A continuous drain current. Features 5.5mOhm Rds On at 4.5V, 1.4V threshold voltage, and 1.9W max power dissipation. Packaged in SOIC for surface mounting, this component offers fast switching with turn-on delay of 28ns and fall time of 32ns. Operating temperature range is -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 32ns |
| Packaging | Tape and Reel |
| Rds On Max | 5.5mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Threshold Voltage | 1.4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 28ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 82ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.5mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 12V |
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