SI7884BDP-T1-E3
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N-Channel MOSFET | 40V | 18.5A | 7.5mR | PowerPAK
Дополнительная информация
N-channel power MOSFET, 40V drain-source voltage, 18.5A continuous drain current, and 7.5mΩ maximum drain-source on-resistance. Features a 1.04mm height, 4.9mm length, and 5.89mm width surface-mount package. Offers 30ns turn-on delay, 38ns turn-off delay, and 11ns fall time. Operates from -55°C to 150°C with a maximum power dissipation of 46W. RoHS compliant and suitable for general-purpose power applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.5mR |
| Nominal Vgs | 1V |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 3.54nF |
| Power Dissipation | 4.6W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 38ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 46W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 18.5A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 7.5mR |
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