SI7900AEDN-T1-E3
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Краткое описание:
2-Ch N-Ch MOSFET, 20V, 6A, 26mR, PowerPAK-8, SM
Дополнительная информация
Dual N-channel power MOSFET featuring 20V drain-source voltage and 6A continuous drain current. Offers low 26mΩ drain-to-source resistance for efficient power handling. Surface-mount design in a compact PowerPAK-8 package with 1.04mm height, 3.05mm width, and 3.05mm length. Operates across a wide temperature range of -55°C to 150°C with a maximum power dissipation of 1.5W. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 1300ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 26mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Number of Channels | 2 |
| Turn-On Delay Time | 850ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 8600ns |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 26mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 20V |
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