SI7900AEDN-T1-GE3
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TRANSISTOR 6 A, 20 V, 0.026 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8, FET General Purpose Power
Дополнительная информация
TRANSISTOR 6 A, 20 V, 0.026 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8, FET General Purpose Power
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 1300ns |
| Packaging | Tape and Reel |
| Rds On Max | 26mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Number of Channels | 2 |
| Turn-On Delay Time | 850ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 8600ns |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 26mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 20V |
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