SI7905DN-T1-E3

Снят с производства
SI7905DN-T1-E3 - Vishay(Siliconix)
Увеличить
Краткое описание: P-CH MOSFET 40V 5A 60mR Surface Mount
Производитель Vishay(Siliconix)
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel MOSFET featuring 40V drain-source voltage and 5A continuous drain current. Offers a maximum on-resistance of 60mΩ. Designed for surface mount applications in an 8-pin PowerPAK package, with a compact footprint of 3.05mm x 3.05mm x 1.04mm. Includes fast switching characteristics with turn-on delay of 6ns and fall time of 10ns. Operates within a temperature range of -50°C to 150°C and supports a maximum power dissipation of 20.8W.
RoHS Compliant
Mount Surface Mount
Width 3.05mm
Height 1.04mm
Length 3.05mm
Series TrenchFET®
Polarity P-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 60mR
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 880pF
Number of Channels 2
Turn-On Delay Time 6ns
Radiation Hardening No
Turn-Off Delay Time 26ns
Max Power Dissipation 20.8W
Max Operating Temperature 150°C
Min Operating Temperature -50°C
Drain to Source Resistance 60mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 5A
Drain to Source Voltage (Vdss) 40V
Drain-source On Resistance-Max 60mR

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.