SI7905DN-T1-GE3
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Краткое описание:
40V P-CH MOSFET, 5A, 60mR, Dual Channel, SMT
Дополнительная информация
Dual P-Channel MOSFET featuring a -40V Drain-to-Source Voltage (Vdss) and 5A Continuous Drain Current (ID). Surface mount component with a low 60mΩ Drain-source On Resistance (Rds On Max). Operates across a wide temperature range from -50°C to 150°C, with a maximum power dissipation of 2.5W. Includes fast switching characteristics with a 6ns turn-on delay and 10ns fall time. Packaged in tape and reel for automated assembly.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 880pF |
| Threshold Voltage | -3V |
| Number of Channels | 2 |
| Turn-On Delay Time | 6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Drain to Source Resistance | 60mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | -40V |
| Drain-source On Resistance-Max | 60mR |
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