SI7913DN-T1-GE3

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SI7913DN-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 20V 5A 37mR TrenchFET® Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel PowerPAK 1212 MOSFET, surface mount, featuring a -20V drain-source voltage and 5A continuous drain current. Offers a low 37mΩ drain-source on-resistance and a maximum power dissipation of 1.3W. Operates across a -55°C to 150°C temperature range with fast switching characteristics, including a 20ns turn-on delay and 70ns fall time. This RoHS compliant component is supplied in tape and reel packaging.
RoHS Compliant
Mount Surface Mount
Width 3.05mm
Height 1.04mm
Length 3.05mm
Series TrenchFET®
Polarity P-CHANNEL
Fall Time 70ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 37mR
RoHS Compliant Yes
Package Quantity 3000
Threshold Voltage -1V
Number of Channels 2
Turn-On Delay Time 20ns
Turn-Off Delay Time 72ns
Reach SVHC Compliant Unknown
Max Power Dissipation 1.3W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 37mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 5A
Drain to Source Voltage (Vdss) -20V
Drain-source On Resistance-Max 37MR

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