SI7922DN-T1-E3
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Краткое описание:
N-CH MOSFET 100V 1.8A 195mR 2-Ch Surface Mount
Дополнительная информация
N-channel MOSFET featuring 100V drain-source breakdown voltage and 1.8A continuous drain current. This dual-channel device offers a maximum drain-source on-resistance of 195mΩ at a nominal gate-source voltage of 3.5V. Operating across a temperature range of -55°C to 150°C, it boasts a maximum power dissipation of 1.3W and is housed in a compact 8-pin PowerPAK 1212 surface-mount package. Fast switching characteristics are evident with turn-on delay times of 7ns and fall times of 11ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 195mR |
| Nominal Vgs | 3.5V |
| Package/Case | Module |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.3W |
| Threshold Voltage | 3.5V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 8ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 195mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 195mR |
| Drain to Source Breakdown Voltage | 100V |
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