SI7923DN-T1-E3
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Краткое описание:
P-CH MOSFET, -30V, 4.3A, 47mR Rds On, SMT
Дополнительная информация
P-channel MOSFET with a -30V drain-source voltage and 4.3A continuous drain current. Features a low 47mΩ drain-source on-resistance and a -3V threshold voltage. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 1.3W. This surface-mount component is housed in an 8-pin PowerPAK 1212 package, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 47mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Threshold Voltage | -3V |
| Number of Channels | 2 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 38ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 47mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 47mR |
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