SI7923DN-T1-GE3

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SI7923DN-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET, -30V, 4.3A, 47mR, SMT, 8-Pin
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

P-Channel PowerPAK MOSFET with a -30V drain-source voltage and 4.3A continuous drain current. Features a low 47mΩ drain-to-source resistance and a 10ns turn-on delay. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 1.3W. This surface-mount component is supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Polarity P-CHANNEL
Fall Time 28ns
Packaging Tape and Reel
Rds On Max 47mR
RoHS Compliant Yes
Package Quantity 3000
Threshold Voltage -1V
Number of Channels 2
Turn-On Delay Time 10ns
Radiation Hardening No
Turn-Off Delay Time 38ns
Reach SVHC Compliant Unknown
Max Power Dissipation 1.3W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 47mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 4.3A
Drain to Source Voltage (Vdss) -30V

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