SI7949DP-T1-GE3
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Краткое описание:
P-CHANNEL TrenchFET MOSFET, 3.2A, 20V, SOIC Package
Дополнительная информация
The SI7949DP-T1-GE3 is a P-channel TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 3.2A and a drain to source voltage of -60V. The device features a drain to source resistance of 64mR and a maximum power dissipation of 1.5W. It is available in a SOIC package and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Fall Time | 30ns |
| Packaging | Tape and Reel |
| Rds On Max | 64mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Threshold Voltage | -3V |
| Number of Channels | 2 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 65ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 64mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Voltage (Vdss) | -60V |
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