SI7956DP-T1-E3
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Краткое описание:
150V 2.6A 105mR 2-CH N-CH MOSFET SOIC
Дополнительная информация
Dual N-channel MOSFET, 150V drain-source voltage, 2.6A continuous drain current, and 105mΩ drain-source resistance. Features include a 1.4W power dissipation, 36ns fall time, 18ns turn-off delay, and 13ns turn-on delay. Packaged in a PPAK SO-8 surface-mount SOIC, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 36ns |
| Packaging | Tape and Reel |
| Rds On Max | 105mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.4W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 105mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Voltage (Vdss) | 150V |
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