SI7980DP-T1-GE3
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Краткое описание:
2 N-CH MOSFET 20V 8A 22mR SOIC Surface Mount
Дополнительная информация
Surface mount N-channel MOSFET featuring 20V drain-source voltage and 8A continuous drain current. Offers low 22mΩ drain-to-source resistance and fast switching speeds with 18ns turn-on and 25ns turn-off delay times. Designed for efficient power management with a maximum power dissipation of 21.9W and operates across a wide temperature range from -55°C to 150°C. Packaged in a compact SOIC case, this RoHS compliant component is ideal for high-density electronic applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 22mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.01nF |
| Power Dissipation | 3.4W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Max Power Dissipation | 21.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 20V |
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