SI8406DB-T2-E1
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Краткое описание:
N-Channel MOSFET, 20V, 16A, 33mR RdsOn, BGA
Дополнительная информация
N-channel MOSFET transistor featuring 20V drain-source voltage and 16A continuous drain current. Offers low 33mΩ Rds On resistance at 4.5V gate-source voltage. Designed for surface mount applications with a compact 1.5mm x 1mm BGA package. Boasts fast switching speeds with 7ns turn-on delay and 10ns fall time. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1mm |
| Height | 0.31mm |
| Length | 1.5mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 33mR |
| Package/Case | BGA |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 830pF |
| Threshold Voltage | 400mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 13W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 33mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 20V |
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