SI8416DB-T2-E1
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Краткое описание:
N-CH MOSFET, 8V, 16A, 23mR, BGA, 13W, 1.5x1mm
Дополнительная информация
N-channel MOSFET, general-purpose power transistor with a 8V Drain to Source Voltage (Vdss) and 16A Continuous Drain Current (ID). Features a low 23mR Drain to Source Resistance (Rds On Max) and a 350mV Threshold Voltage. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 13W. Packaged in a compact 1.5mm x 1mm BGA for surface mounting, with fast switching characteristics including a 13ns Turn-On Delay Time and 20ns Fall Time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1mm |
| Height | 0.31mm |
| Length | 1.5mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Packaging | Tape and Reel |
| Rds On Max | 23mR |
| Package/Case | BGA |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.47nF |
| Threshold Voltage | 350mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 13W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 23mR |
| Gate to Source Voltage (Vgs) | 5V |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 8V |
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