SI8424DB-T1-E1
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N-Channel Power MOSFET, 8.1A, 8V, 31mR Rds On, SMT
Дополнительная информация
N-Channel Power MOSFET with 8V Drain-Source Voltage and 8.1A Continuous Drain Current. Features 31mΩ maximum Drain-Source On-Resistance and 2.78W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in a 4-pin package, supplied on tape and reel. Compliant with RoHS standards.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 31mR |
| Nominal Vgs | 1V |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.95nF |
| Threshold Voltage | 1V |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 110ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.78W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 31mR |
| Gate to Source Voltage (Vgs) | 5V |
| Continuous Drain Current (ID) | 8.1A |
| Drain to Source Voltage (Vdss) | 8V |
| Drain-source On Resistance-Max | 31MR |
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