SI8465DB-T2-E1
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Краткое описание:
P-Channel TrenchFET MOSFET, -20V, -3.8A, 104mR, 150°C
Дополнительная информация
The SI8465DB-T2-E1 is a P-channel TrenchFET MOSFET from Vishay with a maximum drain to source voltage of -20V and a continuous drain current of -3.8A. It has a maximum power dissipation of 780mW and an on-resistance of 104mR. The device is rated for operation up to 150°C and is available in a surface mount package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 104mR |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 450pF |
| Threshold Voltage | -1.5V |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 780mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 122mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | -3.8A |
| Drain to Source Voltage (Vdss) | -20V |
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