SI8489EDB-T2-E1
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Краткое описание:
Small Signal Field-Effect Transistor, 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1 X 1 MM, 0.548 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, MICRO FOOT, 4 PIN
Дополнительная информация
Small Signal Field-Effect Transistor, 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1 X 1 MM, 0.548 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, MICRO FOOT, 4 PIN
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 25ns |
| Packaging | Tape and Reel |
| Rds On Max | 44mR |
| Package/Case | BGA |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 765pF |
| Power Dissipation | 1.8W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 27ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 44mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Voltage (Vdss) | 20V |
