SI8800EDB-T2-E1
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Краткое описание:
N-CH JFET 20V 2.8A 80mR Surface Mount
Дополнительная информация
N-channel MOSFET with 20V drain-source voltage and 2.8A continuous drain current. Features low drain-source on-resistance of 80mΩ maximum and 95mΩ typical. Operates across a temperature range of -55°C to 125°C with a maximum power dissipation of 500mW. This surface-mount device is supplied on tape and reel, offering a 350ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 350ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 80mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Number of Channels | 2 |
| Radiation Hardening | No |
| Max Power Dissipation | 500mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 95mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 2.8A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 80mR |
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