SI8802DB-T2-E1
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Краткое описание:
N-CH MOSFET 8V 3.5A 44mR BGA Surface Mount
Дополнительная информация
N-channel MOSFET with 8V drain-source voltage (Vdss) and 3.5A continuous drain current (ID). Features low 44mR drain-source resistance and a maximum on-resistance of 54mR at 5V gate-source voltage. This surface-mount component utilizes a BGA package and offers fast switching with a 5ns turn-on delay and 7ns fall time. Operates across a -55°C to 150°C temperature range, with 900mW maximum power dissipation.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 54mR |
| Nominal Vgs | 350mV |
| Package/Case | BGA |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Number of Channels | 1 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 900mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 44mR |
| Gate to Source Voltage (Vgs) | 5V |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Voltage (Vdss) | 8V |
| Drain-source On Resistance-Max | 54mR |
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