SI9407BDY-T1-GE3
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Краткое описание:
P-CH JFET, 60V, 3.2A, 120mR, SOIC-8, Surface Mount
Дополнительная информация
P-channel, small-signal MOSFET for general-purpose applications. Features a 60V drain-source voltage and 3.2A continuous drain current. Offers low on-resistance of 120mΩ at a 10V gate-source voltage. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 5W. Packaged in a surface-mount SOIC-8 package, this component is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 120mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 600pF |
| Power Dissipation | 5W |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 120mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 120mR |
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