SI9410BDY-T1-E3
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Краткое описание:
N-Channel JFET, 30V, 6.2A, 24mR Rds On, SOP-8
Дополнительная информация
N-channel, general-purpose small-signal MOSFET featuring a 30V drain-source voltage and 6.2A continuous drain current. This surface-mount device offers a low 24mΩ drain-source on-resistance and operates across a wide temperature range of -55°C to 150°C. With a 1.5W power dissipation and fast switching times, including a 10ns turn-on delay and 15ns fall time, it is suitable for demanding applications. The component is packaged in an 8-pin SOP (Small Outline Package) and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 24mR |
| Nominal Vgs | 1V |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1.5W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 24mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 24mR |
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