SI9433BDY-T1-GE3

Не рекомендуется для новых проектов
SI9433BDY-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET, 20V, 4.5A, 40mR RdsOn, SOP-8
Производитель Vishay(Siliconix)
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

P-channel MOSFET, designed for general-purpose small signal applications. Features a continuous drain current of 4.5A and a drain-to-source voltage of -20V. Offers a low drain-to-source resistance of 40mR. Operates within a temperature range of -55°C to 150°C and supports surface mounting in a compact SOIC package. This component is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.55mm
Length 5mm
Series SI9
Weight 0.01787oz
Polarity P-CHANNEL
Fall Time 30ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 40mR
Package/Case SOIC
RoHS Compliant Yes
Package Quantity 1
Threshold Voltage -1.5V
Number of Channels 1
Turn-On Delay Time 40ns
Radiation Hardening No
Turn-Off Delay Time 65ns
Reach SVHC Compliant Unknown
Max Power Dissipation 1.3W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 40mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 4.5A
Drain to Source Voltage (Vdss) -20V

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