SI9435BDY-T1-E3
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Краткое описание:
P-Channel JFET, 30V, 4.1A, 42mR Rds On, SOP-8
Дополнительная информация
P-channel MOSFET, designed for general-purpose small signal applications. Features a continuous drain current of 4.1A and a drain-to-source voltage of -30V. Offers a low drain-source on-resistance of 42mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Packaged in an 8-pin SO (SOP-8) surface-mount package, supplied on tape and reel. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 14ns |
| Packaging | Tape and Reel |
| Rds On Max | 42mR |
| Nominal Vgs | -1V |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1.3W |
| Threshold Voltage | -1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 42ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 42mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 42mR |
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