SI9435BDY-T1-GE3

Не рекомендуется для новых проектов
SI9435BDY-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET, 30V, 4.1A, 42mR Rds(on), SOP-8
Производитель Vishay(Siliconix)
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

P-channel MOSFET, surface mount, designed for general-purpose small signal applications. Features a continuous drain current of 4.1A and a drain-source voltage of -30V. Offers a low drain-source on-resistance of 42mR. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.3W. This component is halogen-free and RoHS compliant, packaged in a tape and reel for surface mounting.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Weight 0.006596oz
Polarity P-CHANNEL
Fall Time 14ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 42mR
Package/Case SO
RoHS Compliant Yes
Package Quantity 2500
Threshold Voltage -3V
Number of Channels 1
Turn-On Delay Time 14ns
Radiation Hardening No
Turn-Off Delay Time 42ns
Reach SVHC Compliant Unknown
Max Power Dissipation 1.3W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 42mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 4.1A
Drain to Source Voltage (Vdss) -30V
Drain-source On Resistance-Max 42mR

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