SI9910DJ-E3
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Краткое описание:
1A Gate Driver IC, 16.5V, 1-Out, Half Bridge, PDIP
Дополнительная информация
High-side MOSFET gate driver IC with 1A output current capability. Features a 16.5V drain-to-source voltage and operates from a 10.8V to 16.5V supply. This through-hole component offers a 135ns propagation delay and 35ns fall time. Packaged in an 8-pin PDIP, it supports a maximum power dissipation of 700mW and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 7.11mm |
| Height | 3.81mm |
| Length | 10.92mm |
| Weight | 0.032805oz |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | PDIP |
| Output Current | 1A |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Number of Drivers | 1 |
| Number of Outputs | 1 |
| Power Dissipation | 700mW |
| Propagation Delay | 135ns |
| Input Bias Current | 1uA |
| Max Output Current | 1A |
| Max Supply Current | 500uA |
| Max Supply Voltage | 16.5V |
| Min Supply Voltage | 10.8V |
| Turn-On Delay Time | 135ns |
| On-State Resistance | 100mR |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 700mW |
| Operating Supply Current | 500uA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Drain to Source Voltage (Vdss) | 16.5V |
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