SI9926CDY-T1-E3
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Краткое описание:
20V 8A N-CH MOSFET, 18mR Rds On, SOIC
Дополнительная информация
Dual N-channel MOSFET, 20V Vdss, 8A continuous drain current. Features 18mΩ maximum drain-source on-resistance and 1.5V threshold voltage. Operates across a -55°C to 150°C temperature range with 3.1W maximum power dissipation. Surface mountable in an 8-SOIC package, this component offers 10ns turn-on and fall times, and 25ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 18mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.2nF |
| Threshold Voltage | 1.5V |
| Number of Channels | 2 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 18mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 18mR |
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