SI9933CDY-T1-E3
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Краткое описание:
N/P-Channel MOSFET 20V 4A 58mR SO
Дополнительная информация
N- and P-channel MOSFET with 20V drain-source voltage and 4A continuous drain current. Features 58mΩ maximum drain-source on-resistance at 4.5V gate-source voltage. Offers 3.1W maximum power dissipation and operates across a -50°C to 150°C temperature range. This surface-mount component is packaged in SO for tape and reel distribution.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 58mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 665pF |
| Threshold Voltage | -1.4V |
| Number of Channels | 2 |
| Turn-On Delay Time | 21ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 29ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Drain to Source Resistance | 58mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 58MR |
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