SI9934BDY-T1-E3
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Краткое описание:
P-CH MOSFET, -12V, 4.8A, 35mR Rds On, SOIC
Дополнительная информация
P-channel MOSFET, 12V drain-source voltage, 4.8A continuous drain current, and 35mΩ maximum drain-source on-resistance. Features a 1.4V threshold voltage and operates within a -55°C to 150°C temperature range. This surface-mount component, packaged in an 8-SOIC, offers 19ns turn-on delay and 80ns turn-off delay, with a fall time of 35ns. Maximum power dissipation is 1.1W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 35mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | -1.4V |
| Turn-On Delay Time | 19ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 80ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Voltage (Vdss) | -12V |
| Drain-source On Resistance-Max | 35mR |
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