SI9936BDY-T1-GE3
Снят с производства
Увеличить
Краткое описание:
2-Ch N-Ch JFET 30V 4.5A 35mR SO-8
Дополнительная информация
Dual N-channel JFET for general-purpose small signal applications. Features 30V drain-source voltage, 4.5A continuous drain current, and 35mΩ drain-to-source resistance. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 1.1W. Surface-mount device in an SOP-8 package, supplied on tape and reel. RoHS compliant with 10ns turn-on and 25ns turn-off delay times.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | SI9 |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 35mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Threshold Voltage | 1V |
| Number of Channels | 2 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
