SIA400EDJ-T1-GE3
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Краткое описание:
N-Channel MOSFET, 30V, 19mR, 12A, 19.2W, SMT
Дополнительная информация
Single N-Channel MOSFET featuring 30V drain-to-source voltage and 12A continuous drain current. Offers low 19mΩ drain-to-source resistance at a 10V gate-source voltage. This surface mount component boasts a maximum power dissipation of 19.2W and operates across a wide temperature range from -55°C to 150°C. Its compact 2.05mm x 2.05mm x 0.75mm package is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.05mm |
| Height | 0.75mm |
| Length | 2.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Packaging | Tape and Reel |
| Rds On Max | 19mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.265nF |
| Number of Channels | 1 |
| Radiation Hardening | No |
| Max Power Dissipation | 19.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 19mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 30V |
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