SIA406DJ-T1-GE3
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Краткое описание:
12V N-CH MOSFET 4.5A 19.8mR 19W SMT
Дополнительная информация
N-channel MOSFET with 12V drain-source voltage and 4.5A continuous drain current. Features low 19.8mΩ drain-source on-resistance at 4.5V gate-source voltage. Offers 19W maximum power dissipation and operates from -55°C to 150°C. Surface mountable in a compact 2.05mm x 2.05mm x 0.75mm package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.05mm |
| Height | 0.75mm |
| Length | 2.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 19.8mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.38nF |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 19W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 19.8mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 19.8mR |
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