SIA413DJ-T1-GE3
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Краткое описание:
P-CH MOSFET 12V 10A 19W 29mR SC
Дополнительная информация
P-channel MOSFET, 12V drain-source voltage, 10A continuous drain current, and 19W maximum power dissipation. Features a low 29mΩ drain-source on-resistance at 4.5V gate-source voltage. Operates across a -55°C to 150°C temperature range. Packaged in a compact SC surface-mount case, ideal for tape and reel assembly.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.05mm |
| Height | 0.75mm |
| Length | 2.05mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 29mR |
| Nominal Vgs | -1V |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.8nF |
| Threshold Voltage | -1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 19W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 29mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | -12V |
| Drain-source On Resistance-Max | 29mR |
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