SIA415DJ-T1-GE3
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Краткое описание:
P-CH MOSFET, -20V, 12A, 35mR Rds On, SC-82
Дополнительная информация
P-channel MOSFET for surface mount applications, featuring a 20V drain-source voltage and 12A continuous drain current. This component offers a low 35mΩ drain-source on-resistance and operates within a -55°C to 150°C temperature range. With a 1.25nF input capacitance and fast switching times (25ns turn-on, 45ns turn-off), it is suitable for efficient power management. The SC package ensures a compact footprint with dimensions of 2.05mm x 2.05mm x 0.75mm.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.05mm |
| Height | 0.75mm |
| Length | 2.05mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 35mR |
| Nominal Vgs | -1.5V |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.25nF |
| Threshold Voltage | -1.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 19W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 35mR |
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