SIA426DJ-T1-GE3
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Краткое описание:
N-CH MOSFET 20V 4.5A 23.6mR SC-70
Дополнительная информация
N-channel MOSFET with 20V drain-source voltage (Vdss) and 4.5A continuous drain current (ID). Features low 23.6mΩ drain-to-source resistance (Rds On Max) at a nominal gate-source voltage (Vgs) of 1.5V. Operates with a maximum gate-source voltage of 12V and exhibits fast switching characteristics with turn-on delay time of 12ns and fall time of 11ns. This surface mount component, housed in an SC package, offers a maximum power dissipation of 3.5W and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.05mm |
| Height | 0.75mm |
| Length | 2.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 23.6mR |
| Nominal Vgs | 1.5V |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.02nF |
| Power Dissipation | 3.5W |
| Threshold Voltage | 1.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 27ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 23.6mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 20V |
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