SIA427DJ-T1-GE3
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Краткое описание:
P-Channel Power MOSFET, -8V, -12A, 16mR, Surface Mount
Дополнительная информация
P-channel power MOSFET with a continuous drain current of -12A and a drain-to-source voltage of -8V. Features low on-resistance of 13mΩ at a gate-source voltage of 5V. Surface mountable in a 6-pin SC-70 PowerPAK package, this component offers fast switching with turn-on delay of 20ns and fall time of 40ns. Maximum power dissipation is 19W, operating across a temperature range of -55°C to 150°C. Halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.05mm |
| Height | 0.75mm |
| Length | 2.05mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 16mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.3nF |
| Threshold Voltage | 350mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 19W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 13mR |
| Gate to Source Voltage (Vgs) | 5V |
| Continuous Drain Current (ID) | -12A |
| Drain to Source Voltage (Vdss) | -8V |
| Drain-source On Resistance-Max | 13mR |
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