SIA429DJT-T1-GE3
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Краткое описание:
P-Channel MOSFET, -20V, 10.6A, 20.5mR, Surface Mount
Дополнительная информация
P-channel MOSFET with a -20V Drain to Source Voltage (Vdss) and 10.6A Continuous Drain Current (ID). Features low 20.5mR Drain to Source Resistance (Rds On Max) and a 1.75nF Input Capacitance. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 19W. This surface mount component is packaged in tape and reel, offering fast switching times with a 22ns turn-on delay and 25ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.05mm |
| Height | 0.75mm |
| Length | 2.05mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 20.5mR |
| Nominal Vgs | -400mV |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.75nF |
| Power Dissipation | 3.5W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 19W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20.5mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 10.6A |
| Drain to Source Voltage (Vdss) | -20V |
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