SIA430DJ-T1-GE3
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Краткое описание:
N-CH MOSFET 20V 12A 13.5mR SC70-6
Дополнительная информация
N-channel MOSFET with 20V Vds, 12A continuous drain current, and 13.5mΩ maximum drain-source on-resistance. Features a 3V nominal gate-source voltage and 3V threshold voltage. Operates with a maximum power dissipation of 3.5W and a maximum operating temperature of 150°C. Packaged in a compact SC (SC70-6) surface-mount case, ideal for space-constrained applications. Includes fast switching characteristics with turn-on delay of 10ns and fall time of 8ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.05mm |
| Height | 0.75mm |
| Length | 2.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 13.5mR |
| Nominal Vgs | 3V |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 800pF |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 13.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 13.5mR |
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