SIA432DJ-T1-GE3
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Краткое описание:
30V 10.1A N-CH MOSFET, 20mR Rds On, SC-70
Дополнительная информация
N-channel MOSFET, 30V drain-source voltage, 12A continuous drain current, and 20mΩ drain-source resistance. Features a 3V threshold voltage and 15ns turn-on/turn-off delay times. Packaged in a compact SC-70 surface-mount case with a maximum power dissipation of 19.2W. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.05mm |
| Height | 0.75mm |
| Length | 2.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 800pF |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 19.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 10.1A |
| Drain to Source Voltage (Vdss) | 30V |
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