SIA436DJ-T1-GE3

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SIA436DJ-T1-GE3 - Vishay(Siliconix)
Краткое описание: N-CH MOSFET 8V 12A 36mR SC70-6L Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-channel MOSFET with 8V Vdss and 12A continuous drain current. Features low 36mΩ drain-to-source resistance at 5V gate-to-source voltage. Operates from -55°C to 150°C with a maximum power dissipation of 19W. Surface mountable in a compact SC70-6L package, supplied on tape and reel. RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 2.05mm
Height 0.75mm
Length 2.05mm
Series TrenchFET®
Polarity N-CHANNEL
Packaging Tape and Reel
Rds On Max 9.4mR
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 1.508nF
Threshold Voltage 350mV
Number of Channels 1
Turn-On Delay Time 11ns
Radiation Hardening No
Turn-Off Delay Time 30ns
Reach SVHC Compliant Unknown
Max Power Dissipation 19W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 36mR
Gate to Source Voltage (Vgs) 5V
Continuous Drain Current (ID) 12A
Drain to Source Voltage (Vdss) 8V

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