SIA440DJ-T1-GE3
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Краткое описание:
40V 12A N-Channel MOSFET, 26mR Rds(on), SC-70-6L
Дополнительная информация
N-Channel Power MOSFET, 40V Vdss, 12A continuous drain current, and 26mΩ Rds On. Features 12V gate-source voltage, 19W max power dissipation, and operates from -55°C to 150°C. This surface-mount device offers fast switching with a 12ns turn-on delay and 5ns fall time. Packaged in a compact SC-70-6L, it is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.05mm |
| Height | 0.75mm |
| Length | 2.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Packaging | Tape and Reel |
| Rds On Max | 26mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 700pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 19W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 26mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 40V |
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