SIA443DJ-T1-GE3
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Краткое описание:
P-CH MOSFET 20V 6.7A 45mR SC
Дополнительная информация
P-channel MOSFET, 20V Drain-Source Breakdown Voltage, 6.7A Continuous Drain Current, and 45mΩ Max Drain-Source On Resistance at 4.5V. Features 15W power handling, 3.3W Max Power Dissipation, and a -55°C to 150°C operating temperature range. Surface mountable in an SC package, this RoHS compliant component offers 750pF input capacitance and 75ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 75ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 45mR |
| Nominal Vgs | -1V |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 750pF |
| Power Dissipation | 3.3W |
| Threshold Voltage | -1V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 45mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 6.7A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 45MR |
| Drain to Source Breakdown Voltage | 20V |
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