SIA456DJ-T1-GE3
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Краткое описание:
N-Ch MOSFET, 200V, 2.6A, 1.38R, SC, SMT
Дополнительная информация
Single N-Channel Power MOSFET, designed for surface mount applications. Features a 200V drain-source voltage (Vdss) and a maximum drain-source on-resistance (Rds On) of 1.38 Ohms. Offers a continuous drain current (ID) of 2.6A and a power dissipation of 3.5W. Operates within a temperature range of -55°C to 150°C, with fast switching characteristics including a 5ns turn-on delay and 12ns fall time. Packaged in a compact SC-70-6 (2.05mm x 2.05mm x 0.75mm) format, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.05mm |
| Height | 0.75mm |
| Length | 2.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.38R |
| Nominal Vgs | 1.4V |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 350pF |
| Power Dissipation | 3.5W |
| Threshold Voltage | 1.4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.38R |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 1.38R |
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