SIA461DJ-T1-GE3
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Краткое описание:
P-CH MOSFET -20V -12A 33mR Surface Mount
Дополнительная информация
P-channel MOSFET with -20V drain-source voltage and -12A continuous drain current. Features low 33mΩ drain-to-source resistance at 4.5V gate-source voltage and a maximum power dissipation of 17.9W. This surface-mount component operates from -55°C to 150°C and is packaged in tape and reel. Includes 1.3nF input capacitance and a threshold voltage of -400mV.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.05mm |
| Height | 0.75mm |
| Length | 2.05mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Packaging | Tape and Reel |
| Rds On Max | 33mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.3nF |
| Threshold Voltage | -400mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 17.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 33mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | -12A |
| Drain to Source Voltage (Vdss) | -20V |
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